Hot carrier galvanomagnetic characteristics of n-type germanium of intermediate carrier concentration are studied theoretically. The range of carrier concentration considered ensures that the intercarrier collisions enforce a Maxwellian distribution on the carriers, and the momentum loss of the carriers occurs mainly through scattering by the lattice vibrations. Numerical values of Hall mobility obtained from the present analysis are found to be in agreement with the earlier published results for low and high carrier concentrations. Values of magnetoresistance, however, while agreeing with the low concentration case, are found to be different from those for the case of high carrier concentration. The physical origin of this difference is discussed and a comparison between the available experimental data and the values calculated in this paper is also made.