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High performance GaN/InGaN multiple quantum well LEDs through electron blocking layer engineering
Published in Springer Verlag

We report a novel GaN/InGaN LED endowed with rectangular shaped multiple quantum wells and gradual narrowing of the bandgap of electron blocking layer (EBL) towards the anode side and subsequently analyze the obtained results through well-calibrated numerical simulation in APSYS. The results show that the droop in internal quantum efficiency (IQE) for the proposed LED decreases to 11% as compared to 54%, obtained in conventional structure. Additionally, while operated at 150 mA the proposed LED provides an output power that is enhanced by 80% more than what is obtained in conventional LED. The analysis reveals that the gradual change in Al content of EBL layer helps scale down the electric field produced in this region due to polarization which in turn imposes strong blocking on the electrons that try to escape out the active region and move to EBL layer. Moreover, due to less amount of downward valence band bending better hole injection takes place in the active region. Consequently the proposed structure allows increased electron and hole concentrations in the multiple quantum wells thereby enhancing its internal quantum efficiency while a large current flows through the device. © 2018, Springer-Verlag GmbH Germany, part of Springer Nature.

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JournalData powered by TypesetMicrosystem Technologies
PublisherData powered by TypesetSpringer Verlag
Open AccessNo