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Hall mobility and carrier repopulation of n-type silicon at high electric fields
B R NAG, H PARIA, P K BASU
Published in -
1968
Volume: 28
   
Issue: 3
Pages: 202 - 203
Abstract
Experimentally obtained conductivity and Hall mobility characteristics of 5 ohm-cm n-type Si at room temperature for electric fields upto 10 kV/cm applied along the 〈111〉 and 〈100〉 directions are presented. The results are also used to estimate the carrier population in different valleys for electric field applied along the 〈100〉 direction. © 1968.
About the journal
JournalPhysics Letters A
Publisher-
ISSN0375-9601