High temperature annealing of GaAs1-xSbx (x≤0.02) has been used to create an electron trap in the material with properties similar to the SbGa defect related trap detected earlier in Sb-doped GaAs grown by other techniques. Temperature-dependent Hall measurement technique has been used to confirm the first charge state activation energy of the trap being equal to 0.48 eV. Transient photocapacitance technique has further been used to get the second charge state energy of the trap at 0.72 eV.