We report the growth of dilute GaSbN layers on GaSb substrates by liquid-phase epitaxy using polycrystalline GaN as the source of nitrogen in the growth melt. Atomic force microscopy shows uniform layer surface with root mean square roughness of 2.6 nm. Energy dispersive X-ray measurements confirm the presence of nitrogen in the grown layer. The material is further characterized by high-resolution X-ray diffraction and Fourier transform infrared spectroscopy measurements. Nitrogen incorporation up to 1.7% is obtained with a corresponding band gap reduction of 0.37 eV. © 2006 Elsevier B.V. All rights reserved.

A MONDAL

T D DAS

N HALDER

S DHAR

J KUMAR

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Journal of Crystal Growth

The structural, electronic and optical properties of epitaxial GaSb1-x-yNyBix, lattice matched to GaSb substrates, are calculated under the density functional theory (DFT) formalism of Full Potential Linear Augmented Plane Wave (FP-LAPW) method, implemented in WIEN2K package. From the total energy calculations, the supercell lattice structure is optimized. The structural properties of this alloy are calculated from the equation of state, which indicates a high stability and compressive flexibility of the material. The contribution of the constituent elements to the partial and the total Density of States (DOS) of the quaternary alloy are calculated and the results suggest that the structure is sp-hybridized. Optical absorption coefficient, reflection and refraction coefficients, extinction coefficient and energy loss are calculated in the incident photon energy range 0-8 eV and compared with the corresponding parameters calculated for GaSb. Phenomenally high values are obtained for the static part of the complex refractive index as well as for the complex dielectric function of GaSb1-x-yNyBix. The optical conductivity assumes a significantly higher value at very low photon energies and inter-band optical absorption is found to be much less than that in GaSb. The reflectivity and the energy loss as functions of incident photon energy show characteristics inverse to each other. The overall results indicate that GaSb1-x-yNyBix could act as a competent material for infrared optoelectronic applications.

Materials Research Express

First principles study of the structural, electronic and optical properties of epitaxial GaSb 1-x-y N y Bi x , lattice matched to GaSb

The quaternary GaSb1-x-y N (y) Bi (x) , epitaxially grown over GaSb substrates, is proposed as a suitable material for optoelectronic devices in the mid-infrared region. Conduction band anti-crossing and valence band anti-crossing models are used to calculate the conduction band and valence band split-off energies and strain in the material as functions of Bi and N contents. Material compositions and band gap are calculated for various strain conditions, such as unstrained, tensile strain and compressive strain. Ratio of nitrogen concentration to Bi concentration for perfect lattice match with GaSb substrate is calculated as 0.14.

Journal of Materials Science

The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb1-x-y NyBix/GaSb: a theoretical approach

The quaternary GaSb1−x−yNyBix, epitaxially grown over GaSb substrates, is proposed as a suitable material for optoelectronic devices in the mid-infrared region. Conduction band anti-crossing and valence band anti-crossing models are used to calculate the conduction band and valence band split-off energies and strain in the material as functions of Bi and N contents. Material compositions and band gap are calculated for various strain conditions, such as unstrained, tensile strain and compressive strain. Ratio of nitrogen concentration to Bi concentration for perfect lattice match with GaSb substrate is calculated as 0.14. © 2017, Springer Science+Business Media New York.

The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb1âˆ’xâˆ’yNyBix/GaSb: a theoretical approach

The perturbed band structure of a proposed material GaSbBiN, formed by the incorporation of N and Bi in GaSb, is calculated using a 16 band k·p Hamiltonian. The changes in band gap (Eg), spin-orbit splitting energy (ΔSO), conduction band offset (ΔEc) and valence band offset (ΔEv) are investigated as functions of N and Bi mole fractions. In the low temperature regime, the addition of Bi and N to GaSb causes substantial reduction in the band gap and enhances the spin-orbit splitting energy, thereby making Eg &lt; ΔSO which is expected to improve the thermal stability and high-temperature efficiency of photonic devices by the suppression of different loss mechanisms. The values of ΔEc and ΔEv for GaSbBiN alloys, calculated with reference to the host GaSb lattice, increase with the increase in Bi and N concentrations. Calculations indicate that ΔEc &gt; ΔEv which is required for electron confinement in order to get improved temperature-insensitive characteristics of optoelectronic devices. © 2016 Elsevier B.V.

Current Applied Physics

Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloys

Dilute GaAsN layers are grown by liquid phase epitaxy technique from a GaAs + Ga + GaN melt with upto 2 mol% Li 3 N added to the same to act as a flux to promote nitrogen dissolution in Ga. A maximum nitrogen content of 1 at% in the material is obtained as measured by high resolution X-ray diffraction studies. Further 10 K photoluminescence measurements showed a band gap reduction of 145 meV in the as-grown layers. The material has been used to fabricate metal-semiconductor-metal photodiodes with a peak response of 0.06 A/W at 858 nm wavelength. © 2012 IEEE.

CODEC 2012 - 5th International Conference on Computers and Devices for Communication

LPE grown GaAs 1-x N x (x â‰¤ 0.01) for photoconductive devices

Dilute GaAsN layers are grown by liquid phase epitaxy from saturated melts containing polycrystalline GaN as the source of nitrogen. From photoluminescence measurements the nitrogen content in the material is obtained. Low temperature photocurrent and photocapacitance measurements reveal the presence of an electron trap with an ionization energy of 0.65-0.67 eV in the as-grown layers, whose origin is related to interstitial (N-N)As defects. High temperature annealing of the material almost removed the trap and new electron traps at 0.8 and 0.9 eV are produced. It is suggested that during the annealing process the (N-N)As defects, due to their lower energy of formation, are converted to more thermally stable (AsGa-NAs) or (AsN)As defects which might be the source of the new electron traps. High temperature treatment of the growth melt with erbium is found to remove nitrogen from the grown layer with complete annihilation of all the electron traps. © 2005 IOP Publishing Ltd.

Fulltext

Semiconductor Science and Technology

Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxy

The growth of dilute GaAsN layers using polycrystalline GaN as the source of nitrogen was studied using liquid phase epitaxy (LPE) technique. Investigations show a band-gap reduction of 90 meV due to the optical transmission and photocurrent technique. An electron trap of 0.07 eV was found in the material originated due to the nitrogen. The results show that the growth of electron trap was tentatively related to (N-N) defects at As sites.

Journal	Data powered by TypesetJournal of Crystal Growth
Publisher	Data powered by TypesetELSEVIER SCIENCE BV
ISSN	0022-0248