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Generation of oxygen interstitials with excess in situ Ga doping in chemical bath deposition process for the growth of p-type ZnO nanowires
R SAHA, N R SAHA, , G K DALAPATI,
Published in Springer New York LLC
2019
Abstract
The current work focuses on the incorporation of excess amount of gallium (Ga) in zinc oxide (ZnO) nanowires to generate oxygen interstitials for developing p-type conductivity. Ga has been used as an n-type dopant in ZnO lattice by reducing its inherent vacancies up to 3% molar ratio of Ga and Zn employing chemical bath deposition technique. However, the addition of more than 4% of gallium nitrate in the bath solution creates oxygen interstitials which are confirmed from the presence of X-ray photoelectron spectroscopy (XPS) peak at 532.6 eV and the relevant cathodoluminescence (CL) peak at 626 nm of the grown Ga-doped ZnO nanowires. The p-type conductivity of such ZnO nanowires has been confirmed from current–voltage, capacitance–voltage and Hall voltage measurements. The reproducibility of the results indicates the incorporation of excess Ga to be a promising technique for growing p-type ZnO nanowires. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.
About the journal
JournalData powered by TypesetJournal of Materials Science: Materials in Electronics
PublisherData powered by TypesetSpringer New York LLC
ISSN0957-4522
Open AccessNo