The free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn are estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings. The change in absorption coefficient for different Sn concentration in the alloys is also reported. © 2012 IEEE.

BRATATI MUKHOPADHYAY

Radio Physics and Electronics

V CHAKRABORTY

P K BASU

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Free carrier absorption in Sn based Group-IV alloys

CODEC 2012 - 5th International Conference on Computers and Devices for Communication

The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1-zCz on Si1-x-yGexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained. © 2018 Chinese Institute of Electronics.

Journal of Semiconductors

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Topics in Applied Physics

Silicon Photonics II

Semiconductor Science and Technology

Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

IEEE Journal of Selected Topics in Quantum Electronics

Development of CMOS-Compatible Integrated Silicon Photonics Devices

Journal of Physics: Condensed Matter

Type-I alignment and direct fundamental gap in SiGe based heterostructures

Applied Physics Letters

Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

Journal	CODEC 2012 - 5th International Conference on Computers and Devices for Communication
Publisher	-
Open Access	No