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Free carrier absorption in Sn based Group-IV alloys
V CHAKRABORTY, , P K BASU
Published in -
2012
Pages: 1 - 4
Abstract
The free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn are estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings. The change in absorption coefficient for different Sn concentration in the alloys is also reported. © 2012 IEEE.
About the journal
JournalCODEC 2012 - 5th International Conference on Computers and Devices for Communication
Publisher-
Open AccessNo