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Free carrier absorption in Sn based Group-IV alloys
V CHAKRABORTY
,
BRATATI MUKHOPADHYAY
,
P K BASU
Published in -
2012
DOI:
10.1109/CODEC.2012.6509305
Pages: 1 - 4
Abstract
The free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn are estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings. The change in absorption coefficient for different Sn concentration in the alloys is also reported. © 2012 IEEE.
Topics:
Free carrier absorption
(61)%
61% related to the paper
,
Phonon
(54)%
54% related to the paper
and
Scattering
(51)%
51% related to the paper
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Free carrier absorption in Sn based Group-IV alloys
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References (16)
Journal Details
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About the journal
Journal
CODEC 2012 - 5th International Conference on Computers and Devices for Communication
Publisher
-
Open Access
No
Authors (1)
BRATATI MUKHOPADHYAY
Radio Physics and Electronics
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Free carrier absorption in Sn based Group-IV alloys
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