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Energy distribution of interface state charge density in Cu-nSi Schottky diode with thin interfacial oxide layer
B RAYCHAUDHURI,
Published in -
1994
Volume: 78
   
Issue: 3
Pages: 233 - 238
Abstract
The experimental energy distribution of the interface state charge density in Cu-nSi diodes is obtained from the current-voltage characteristics using a modified technique which considers the effect of series resistance. The energy distribution of the interface state charge density is found to be linear over a bias voltage range of 0.1 to 0.3 V. © 1994.
About the journal
JournalApplied Surface Science
Publisher-
ISSN0169-4332
Open AccessNo