The experimental energy distribution of the interface state charge density in Cu-nSi diodes is obtained from the current-voltage characteristics using a modified technique which considers the effect of series resistance. The energy distribution of the interface state charge density is found to be linear over a bias voltage range of 0.1 to 0.3 V. © 1994.

PROJNAN CHATTOPADHYAY

Electronic Science

B RAYCHAUDHURI

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Energy distribution of interface state charge density in Cu-nSi Schottky diode with thin interfacial oxide layer

Applied Surface Science

The electrical characteristics of Schottky barrier diodes were studied considering the effect of shunt resistance. Both the DC and the AC behaviour of the device were investigated. It was found that the shunt resistance has a remarkable effect at low bias in contrast to the series resistance which influences the electrical characteristics at large bias. The standard evaluation techniques based on the DC characteristics are found to be inaccurate in the presence of the shunt resistance. Also, the AC conductance and capacitance of the device are significantly influenced, making our previously developed model limited in the presence of a shunt resistance. The well-known conductance and capacitance techniques for the characterization of these devices seem to be inapplicable at low bias because of the above-mentioned parasitic effect.

Journal of Physics D: Applied Physics

The effect of shunt resistance on the electrical characteristics of Schottky barrier diodes

A capacitance technique to determine the interface state density of metal-semiconductor contact is developed which takes care of interfacial oxide layer and series resistance of the device. The technique is applied to Pt- and Co-nSi contacts, and the energy distributions of interface state density are determined. For both devices, the distribution is found to be initially flat, then increasing sharply with energy. Copyright © 1996 Published by Elsevier Science Ltd.

Journal	Applied Surface Science
Publisher	-
ISSN	0169-4332
Open Access	No