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Energy band gap characteristics of GaP1-xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model
D P SAMAJDAR
,
S DHAR
Published in IEEE Computer Society
2014
DOI:
10.1109/ICECI.2014.6767363
Pages: 1 - 4
Abstract
Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy. © 2014 IEEE.
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International Conference on Electronics, Communication and Instrumentation 2014, ICECI 2014
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IEEE Computer Society
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