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Electronic contribution to the elastic constants of strained III-V materials under high magnetic fields
KAMAKHYA P GHATAK, B NAG, G MAZUMDER
Published in Materials Research Society, Pittsburgh, PA, United States
1995
Volume: 379
   
Pages: 109 - 114
Abstract
In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of k.p theory. It is found taking strained Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively. The strain enhances the numerical values of the elastic constants. The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws. In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions.
About the journal
JournalMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society, Pittsburgh, PA, United States
ISSN0272-9172