In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of k.p theory. It is found taking strained Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively. The strain enhances the numerical values of the elastic constants. The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws. In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions.

KAMAKHYA P GHATAK

B NAG

G MAZUMDER

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields

Materials Research Society Symposium - Proceedings

In this paper, we study the Einstein's photoemission from III-V, II-VI, IV-VI and HgTe/CdTe quantum well superlattices (QWSLs) with graded interfaces and quantum well effective mass superlattices in the presence of a quantizing magnetic field on the basis of newly formulated dispersion relations in the respective cases. Besides, the same has been studied from the afore-mentioned quantum dot superlattices and it appears that the photoemission oscillates with increasing carrier degeneracy and quantizing magnetic field in different manners. In addition, the photoemission oscillates with film thickness and increasing photon energy in quantum steps together with the fact that the solution of the Boltzmann transport equation will introduce new physical ideas and new experimental findings under different external conditions. The influence of band structure is apparent from all the figures and we have suggested three applications of the analyses of this paper in the fields of superlattices and microstructures. © 2009 Elsevier Ltd. All rights reserved.

Superlattices and Microstructures

Simple theoretical analysis of the Einstein's photoemission from quantum confined superlattices

In this paper, we study the thermoelectric power under strong magnetic field (TPSM) in quantum dots (QDs) of nonlinear optical, III-V, II-VI, GaP, Ge, Te, Graphite, PtSb2, zerogap, Lead Germanium Telluride, GaSb, stressed materials, Bismuth, IV-VI, II-V, Zinc and Cadmium diphosphides, Bi 2Te3 and Antimony respectively. The TPSM in III-V, ll-VI, IV-VI, HgTe/CdTe quantum well superlattices with graded interfaces and effective mass superlattices of the same materials together with the quantum dots of aforementioned superlattices have also been investigated in this context on the basis of respective carrier dispersion laws. It has been found that the TPSM for the said quantum dots oscillates with increasing thickness and decreases with increasing electron concentration in various manners and oscillates with film thickness, inverse quantizing magnetic field and impurity concentration for all types of superlattices with two entirely different signatures of quantization as appropriate in respective cases of the aforementioned quantized structures. The well known expression of the TPSM for wide-gap materials has been obtained as special case for our generalized analysis under certain limiting condition, and this compatibility is an indirect test of our generalized formalism. Besides, we have suggested the experimental method of determining the carrier contribution to elastic constants for nanostructured materials having arbitrary dispersion laws. Copyright © 2009 American Scientific Publishers All rights reserved.

Journal of Computational and Theoretical Nanoscience

Thermoelectric power under strong magnetic field in quantum dots and quantized superlattices: Simplified theory and relative comparison

Journal of Applied Physics

On the diffusivity‐mobility ratio in small‐gap semiconductors in the presence of a strong magnetic field: Theory and suggestion for experimental determination

Physica Scripta

On the Einstein relation in stressed Kane type semiconductors in the presence of an arbitrarily oriented quantizing magnetic field

physica status solidi (b)

On the Carrier Contribution to Elastic Constants of A3IIB2V Semiconductors

Applied Physics Letters

Aqueous electrochemical growth of anodic sulfide films on mercury cadmium telluride

Physical Review B

Electronic Effects in Elastic Constants of PbTe

Electronic contribution to the elastic constants of strained III-V materials under high magnetic fields

Journal	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society, Pittsburgh, PA, United States
ISSN	0272-9172