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EIT locking of a semiconductor diode laser: Significant improvement over Doppler locking
S MITRA, M M HOSSAIN, , P N GHOSH
Published in INDIAN ASSOC CULTIVATION SCIENCE
2010
Volume: 84
   
Issue: 8
Pages: 969 - 975
Abstract
We report a precise frequency locking technique using electromagnetically induced transparency in an atomic vapour cell for a semiconductor diode laser. The sub natural line-width of EIT (Electromagnetically induced transparency) allows improvement in the stability of the laser diode under the locked condition. D2 transition of 85Rb atom is used for this experiment. Frequency stability of the laser under the locked condition is of the order of 426 kHz which provides nearly 80 times better stability than the Doppler locked condition. © 2010 IACS.
About the journal
JournalIndian Journal of Physics
PublisherINDIAN ASSOC CULTIVATION SCIENCE
ISSN0973-1458