The influence of the well width and the operating current on the transition energies of InxGa1-xN/GaN quantum well (QW) diodes have been studied through the self consistent solution of the Schrödinger and Poisson equations. Large blue shift of the emission energy is observed due to the reduction in the well width. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is minimized by decreasing the width of the QW. © 2012 IEEE.

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University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

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Effects of width of the quantum well on the shift in transition energy with operating current in In x Ga 1−x N/GaN quantum well diodes

CODEC 2012 - 5th International Conference on Computers and Devices for Communication

Band lineup is one of the most important parameters associated with carrier confinement in heterostructures. Relations for computing the band lineups of Inx Ga1-x N based heterostructures have been developed. The band positions for Inx Ga1-x N/GaN heterointerfaces are calculated from the equations developed, which directly corelate the positions of the bands with the band gap of InN and strain at the interface. The strains are calculated from the In mole fractions and lattice constants. The parameters implicitly involved are the elastic stiffness constants (C11 and C12), the hydrostatic deformation potential of the conduction band (a′), and the hydrostatic deformation potential (a) and shear deformation potential (b) for the valence band. Computations have been carried out for different reported band gaps of InN. The effects of strain become prominent as the mole fraction of In increases, changing the band offset ratio. © 2009 American Institute of Physics.

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Journal of Applied Physics

Calculations for the band lineup of strained Inx Ga1-x N/GaN quantum wells: Effects of strain on the band offsets

IEEE Journal of Quantum Electronics

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

Calculation of electric field and optical transitions in InGaN∕GaN quantum wells

Applied Physics Letters

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Physical Review B

Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells

Effects of width of the quantum well on the shift in transition energy with operating current in InxGa1-xN/GaN quantum well diodes

Journal	CODEC 2012 - 5th International Conference on Computers and Devices for Communication
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