Interdiffusion in InxGa1-xAs/GaAs QDs may occur during growth and subsequent device processing steps. As monitored through photoluminescence (PL), the experimental results on the annealing of In xGa1-xAs/GaAs QDs depicts one particular phenomenon, that is, the initially observed PL spectrum is very broad. After annealing, the PL peak undergoes a blueshift and the full width at half maximum (FWHM) decreases, while there is an increase in the intensity, in this paper we have investigated the effects of interdiffusion in QDs with various shapes of theoretical and practical interest like pyramidal, truncated pyramidal and lens shaped through quantum mechanical computations. © 2007 IEEE.