Interdiffusion in InxGa1-xAs/GaAs QDs may occur during growth and subsequent device processing steps. As monitored through photoluminescence (PL), the experimental results on the annealing of In xGa1-xAs/GaAs QDs depicts one particular phenomenon, that is, the initially observed PL spectrum is very broad. After annealing, the PL peak undergoes a blueshift and the full width at half maximum (FWHM) decreases, while there is an increase in the intensity, in this paper we have investigated the effects of interdiffusion in QDs with various shapes of theoretical and practical interest like pyramidal, truncated pyramidal and lens shaped through quantum mechanical computations. © 2007 IEEE.

S KUMAR

S KABI

D BISWAS

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Effects of shape, dimension and interdiffusion on the photoluminescence of III-V semiconductor quantum dots

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Interdiffusion in InX Ga1-X AsGaAs quantum dots (QDs) may occur during high temperature growth and processing, which may create problems in the ultimate device performance. It is simulated through successive high temperature annealing, and the changes at each stage are studied through photoluminescence (PL). Significant changes are observed in the peak energy, linewidth, and intensity of the PL spectra. These have been attributed to relaxation of strain, changes in the composition of InX Ga1-X As, and size distribution of the QDs, which fail to establish proper understanding qualitatively and quantitatively. In this Communication we present appropriate interpretations of the changes in the observed PL through quantum mechanical concepts and computations. © 2007 American Institute of Physics.

Fulltext

Journal of Applied Physics

Interdiffusion induced changes in the photoluminescence of In XGa1-XAs/GaAs quantum dots interpreted

Physical Review B

Electronics states of interdiffused quantum dots

Applied Physics Letters

InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots

Journal	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Publisher	-