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Effective heating in heavily doped semiconductor devices
S S DE, A K GHOSH, T K GHOSH,
Published in NATL INST SCIENCE COMMUNICATION-NISCAIR
2006
Volume: 44
   
Issue: 7
Pages: 543 - 547
Abstract
A model has been developed to investigate the heat generation processes in semiconductor devices under heavily doped condition. The equilibrium between heat generation and heat dissipation by various mechanisms has been studied. The variations of heat dissipation with the change of carrier concentrations and the heat along the distance from the junction to the bulk have been estimated by numerical analyses. These are shown graphically with the results of an earlier work.
About the journal
JournalIndian Journal of Pure and Applied Physics
PublisherNATL INST SCIENCE COMMUNICATION-NISCAIR
ISSN0019-5596
Open AccessNo