A model calculation is made to investigate the effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors having n-channel inversion layers under the influence of strong surface electric fields. It is found, taking n-channel InSb as an example, that both the MOS and surface capacitances show spiky oscillations with changing magnetic field. This is in qualitative agreement with the experimental observations reported elsewhere in MOS structures of Si and Hg1−xCdxTe. It is further observed that the sharpness and the depths of the spikes increase with increasing magnetic field whereas the depths are found to decrease with increasing thickness of the insulating layer. PACS: 73, 85.30. © 1980 IOP Publishing Ltd.

D R CHOUDHURY

A K CHOWDHURY

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Effect of Quantizing Magnetic Field on the Capacitance of MOS Structures of Small-Gap Semiconductors Under Strong Surface Fields

Physica Scripta

It is well-known that the gate capacitance of MOS structures of n-channel inversion layers on small-gap semiconductors is very important parameter since the MOS capacitance can be very easily controlled by varying the gate voltage and also since it explores various other fundamental features of semconductor surfaces in MOS structures. However, the gate capacitance of MOS structures of n-channel inversion layers on ternary semiconductors in the presence of crossed electric and magnetic fields has yet to be investigated since the cross-field configuration is of fundamental importance for classical and quantum transport phenomena. © 1987 SPIE.

Proceedings of SPIE - The International Society for Optical Engineering

Effect of crossed eleotric and magnetic fields on the gate capacitance of mos structures of n--channel inversion layers of ternary semiconductors

Surface Science

Magnetotransport in an inversion layer on p-InSb

Solid-State Electronics

Tunneling of electrons from Si into thermally grown SiO2

Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance

Springer Tracts in Modern Physics

Solid-State Physics

Solid State Communications

Surface cyclotron resonance in InSb

Effect of quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors under strong surface fields

Journal	Physica Scripta
Publisher	-
ISSN	0031-8949