The effect of punch through on the series resistance of n +np+ single drift region Si HP [5082-0432] IMPACT diodes of capacity 0.02 pf around the X band has been studied. The computed result for series resistance fits well with the device data. The analysis shows that for a constant bias current density, when the space charge effect is not prominent, the value of series resistance decreases with the decrease of punch through, determined by the doping density and thickness of the active layer. The decrease of punch through produces an upward shift in the operating frequency of the device. It is also observed that an increase of punch through factor leads to a decrease in negative resistance, conversion efficiency and the susceptance of the device.

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P K CHAKRABORTY

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Effect of punch through on the microwave series resistance of n+np+ Si IMPATT diodes around the X band

Semiconductor Science and Technology

The change of both microwave negative resistance (R) and its parasitic series resistance (Rs) on the rise of junction temperature in the range of 100-220 °C of HP n++np++ Si IMPATT [M. Mitra, M. Das, S. Kar, S.K. Roy, IEEE Trans. Electron. Dev. 40 (1993) 1890] diode at X band (8-12 GHz) have been simulated. The studies followed by Gummel-Blue Technique [H.K. Gummel, J.L. Blue, IEEE Trans. Electron. Dev. 14 (1967) 569] show that for a constant experimental bias current of 25 mA [Mitra et al., 1993], for which the space charge effect is not prominent, the values of negative conductance and negative resistance degrade taking into account the changes in the ionization rates and drift velocities due to rise of temperature. Also observed that the critical series resistance increases with the increase of temperature up to 2.23 Ω, slightly higher than the realistic limit of 2 Ω [Mitra et al., 1993]. © 2006 Elsevier B.V. All rights reserved.

Current Applied Physics

Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode

Following Gummel-Blue approach [1] [H.K. Gummel, J. L. Blue, IEEE Trans. Electron. Devices 14(1967) pp. 569-572.], the effect of undepleted epitaxial layers on the series resistance (Rs) as well as on its microwave properties of single drift region (n+np+) Si IMPATT diodes [2] [M. Mitra, M. Das, S. Kar, S.K. Roy, IEEE Trans. Electron. Devices 40(1993) pp. 1890-1893.] with flat doping profile with capacity 0.2PF at X band under experimental bias current of 25 mA and temperature 373 K have been studied. The computation for series resistance fits well with the device data for flat doping profile [2] [M. Mitra, M. Das, S. Kar, S.K. Roy, IEEE Trans. Electron. Devices 40(1993) pp. 1890-1893.]. The same study has also been simulated on its low-high-low (lhl) doping profile counterpart. The value of Rs increases approximately linearly with the increase of undepleted epi-layer thickness determined by the doping density for both flat and lhl structure. The value of Rs decreases remarkably as the doping profile changes from flat to lhl type. © 2006 Elsevier Ltd. All rights reserved.

Microelectronics Journal

Epitaxial layer induced series resistance and microwave properties of N+NP+ Si X band impatt diodes

Spatial variation of negative resistivity has been studied through computer simulation by considering experimental bias current and the device capacitance of single drift (n+ np+) silicon IMPATT diode operating in the X band. From the total device negative resistivity and reactivity, device negative conductance, susceptance and the diode series resistance have been calculated. Computed values of series resistance nearly fit with the experimental results. The present analysis also gives an idea about the load conductance of the circuit in the small signal condition. © 1996 Taylor and Francis Group, LLC.

Journal	Semiconductor Science and Technology
Publisher	-
ISSN	0268-1242