An attempt is made to formulate the gate capacitance of MOS structures of ternary semiconductors having n-channel inversion layers under magnetic quantization without any approximations of weak or strong electric field limits. It is found, taking n-channel Hg1-xCdxTe as an example, that the gate capacitance exhibits spiky oscillations with the reciprocal magnetic field. It is further observed that the sharpness and the amplitudes of spikes increase with increasing magnetic field. Besides, the corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived. © 1985 IOP Publishing Ltd.

M MONDAL

K P GHATAK

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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University Of Calcutta

Effect of magnetic quantization on the gate capacitance of mos structures of ternary semiconductors

Physica Scripta

We study theoretically the energy spectrum of conduction electrons and the corresponding density-of- states function (DOS) of III-V, ternary and quaternary semiconductors, whose unperturbed energy band structures are defined by the three band model of Kane, in the presence of an external electric field. It has been observed that the unperturbed isotropic energy spectrum becomes modified under external electric field and changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. Besides, the band gap of semiconductors increases with the electric field; a phenomenon never explained earlier either theoretically (Franz-Keldysh effect) or experimentally. In addition, from the study of the DOS, it indicates that the carriers disappear from the edge of the conduction band after certain values of the applied electric field. It has been found taking n-InSb, n-InAs, Hg1-xCdxTe and In 1-xGaxAsyP1-y lattice matched to InP as examples of Kane-type semiconductors for numerical computation that the increase of band gap and disappearance of carriers from the edges of the conduction band do happen for all types of materials in the presence of external electric field. The well-known energy spectrum and the corresponding DOS for wide-gap semiconductors in the absence of electric field have been obtained under certain limiting conditions from the theoretical expressions. This compatibility is an indirect mathematical test of our generalized analysis. © 2006 Elsevier B.V. All rights reserved.

Physica B: Condensed Matter

Simple theoretical analysis of the density-of-states function of Kane type semiconductors in the presence of an external electric field

It is well-known that the gate capacitance of MOS structures of n-channel inversion layers on small-gap semiconductors is very important parameter since the MOS capacitance can be very easily controlled by varying the gate voltage and also since it explores various other fundamental features of semconductor surfaces in MOS structures. However, the gate capacitance of MOS structures of n-channel inversion layers on ternary semiconductors in the presence of crossed electric and magnetic fields has yet to be investigated since the cross-field configuration is of fundamental importance for classical and quantum transport phenomena. © 1987 SPIE.

Journal	Physica Scripta
Publisher	ROYAL SWEDISH ACAD SCIENCES
ISSN	0031-8949