Header menu link for other important links
X
Effect of magnetic quantization on the gate capacitance of mos structures of ternary semiconductors
M MONDAL, K P GHATAK
Published in ROYAL SWEDISH ACAD SCIENCES
1985
Volume: 31
   
Issue: 6
Pages: 613 - 615
Abstract
An attempt is made to formulate the gate capacitance of MOS structures of ternary semiconductors having n-channel inversion layers under magnetic quantization without any approximations of weak or strong electric field limits. It is found, taking n-channel Hg1-xCdxTe as an example, that the gate capacitance exhibits spiky oscillations with the reciprocal magnetic field. It is further observed that the sharpness and the amplitudes of spikes increase with increasing magnetic field. Besides, the corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived. © 1985 IOP Publishing Ltd.
About the journal
JournalPhysica Scripta
PublisherROYAL SWEDISH ACAD SCIENCES
ISSN0031-8949