An attempt is made to derive an expression for the electronic heat capacity in heavily‐doped semiconductors having Gaussian band‐tails. With the help of this expression, the electronic heat capacity is studied as a function of the electron concentration corresponding to different temperatures, taking heavily‐doped n‐GaAs having Gaussian band‐tails as an example. It is concluded that the nature of the dependence is determined exclusively by the movement of the Fermi level with changing electron concentration through the allowed energy states. Copyright © 1982 WILEY‐VCH Verlag GmbH & Co. KGaA