We present a theoretical study of the gain of a CMOS compatible thin submicron Si-CMOS p-i-n avalanche photodetector (APD) suitable for high-speed, low-voltage operation. A 2-D model is used to estimate the avalanche build-up of carriers in the depleted region considering the dead-space effect. The model is also considered the effects of diffusion of carriers from the substrate region. The results on the gain are shown as a function of finger spacing and bias. © 2015 IEEE.

NIKHIL DAS

Radio Physics and Electronics

K MAJUMDER

P RAKSHIT

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Effect of finger spacing on the gain of a silicon avalanche photodetector compatible with CMOS technology

Proceedings of the 2015 International Conference on Microwave and Photonics, ICMAP 2015

We describe the calculation of gain and bandwidth of an n(+)-i-p(+) avalanche photodiode (APD) for a multiplication layer down to tens of nanometers. The computed results are used to make a comparative study of galliumarsenide (GaAs) and silicon (Si) APDs. In the analysis, the depletion region is discretized into equal energy segments to take into account the discontinuous nature of impact ionization in the multiplication layer due to dead-space effect. Also, the carrier diffusion from undepleted regions is considered to study the effect of low bias on the frequency response. Carrier distribution within the structure is obtained by a numerical solution of coupled equations and recurrence relations. The model is verified with some experimental data taken from literature. Results show that gain increases with bias more rapidly for thinner multiplication layer. The Si APD is thinner than GaAs APD for the same gain at a given bias. Diffusion causes significant reduction of bandwidth at a low gain, with the change being sharper for GaAs APD than for Si APD. (C) 2013 Society of Photo-Optical Instrumentation Engineers (SPIE)

Optical Engineering

Gain and bandwidth analysis and comparison for gallium arsenide and silicon avalanche photodiodes with very thin multiplication layer

IEEE Transactions on Electron Devices

Area-Dependent Photodetection Frequency Response Characterization of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

IEEE Electron Device Letters

Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

Journal	Data powered by TypesetProceedings of the 2015 International Conference on Microwave and Photonics, ICMAP 2015
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open Access	No