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Effect of electron- and hole-dominant photocurrent on the millimetre wave properties of an indium phosphide IMPATT diode at a 94 GHz window under optical illumination
J P BANERJEE, R MUKHERJEE
Published in -
1994
Volume: 9
   
Issue: 9
Pages: 1690 - 1695
Abstract
The effect of photogenerated predominant electron or hole components of the leakage current on the admittance and negative resistance properties of a 94 GHz p+nn+ indium phosphide IMPATT diode under optical illumination is presented in this paper. A computer modelling and simulation technique has been used to study the above effect. The results show that the photogenerated leakage current dominated by holes is more important than that dominated by electrons in modulating the millimetre wave properties of the device and shifting its oscillation frequency. The magnitudes of electron or hole ionization rates in the semiconductor have been found to be correlated with the above effect.
About the journal
JournalSemiconductor Science and Technology
Publisher-
ISSN0268-1242