Dilute GaAsN layers are grown by liquid phase epitaxy from saturated melts containing polycrystalline GaN as the source of nitrogen. From photoluminescence measurements the nitrogen content in the material is obtained. Low temperature photocurrent and photocapacitance measurements reveal the presence of an electron trap with an ionization energy of 0.65-0.67 eV in the as-grown layers, whose origin is related to interstitial (N-N)As defects. High temperature annealing of the material almost removed the trap and new electron traps at 0.8 and 0.9 eV are produced. It is suggested that during the annealing process the (N-N)As defects, due to their lower energy of formation, are converted to more thermally stable (AsGa-NAs) or (AsN)As defects which might be the source of the new electron traps. High temperature treatment of the growth melt with erbium is found to remove nitrogen from the grown layer with complete annihilation of all the electron traps. © 2005 IOP Publishing Ltd.

S DHAR

N HALDER

A MONDAL

B BANSAL

B M ARORA

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University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxy

Semiconductor Science and Technology

Dilute GaAsN layers are grown by the liquid phase epitaxy technique from a GaAs + Ga + GaN melt with up to 2 mol% Li 3 N added to the same to act as a flux to promote nitrogen dissolution in Ga. X-ray diffraction study indicates a nitrogen content of 0.9 at.% in the material. 10 K photoluminescence measurements indicate a band gap reduction of 130 meV in the as-grown layers which increases to 150 meV after a high-temperature anneal. Energy dispersive x-ray measurements indicate incorporation of Li in the material and local vibrational modes related to both nitrogen and Li are observed through Raman spectroscopy. Furthermore, a photoluminescence peak at 1.33 eV is suggested to be due to Li. © 2011 IOP Publishing Ltd.

Properties of GaAsN layers grown from melt containing Li 3 N as flux for enhancing nitrogen dissolution

The Hall mobility of GaAsN layers grown by liquid phase epitaxy (LPE) is studied as a function of the nitrogen content in the material. It is observed that the parameter decreases with increasing nitrogen in the layer, in agreement with earlier theoretical predictions assuming scattering of electrons in nitrogen-related defects. It is also found that the decrease in mobility is accompanied by a corresponding increase in the density of electron traps, believed to originate from different configurations of nitrogen defect centers. The observation clearly suggests that nitrogen-related defects are responsible for lowering the mobility in LPE-grown GaAsN. © 2008 IOP Publishing Ltd.

Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy

We have grown dilute InPN layers by liquid phase epitaxy and characterized them using high resolution x-ray diffraction, optical absorption, low temperature photoluminescence, and Hall measurement techniques. Our results indicate that a maximum amount of 0.2% nitrogen has been incorporated in the material with a band gap lowering consistent with expectations. The crystalline quality of the material is found to improve upon nitrogen incorporation. Large increase in luminescence from the material is observed after a high temperature annealing. © 2008 American Institute of Physics.

Journal of Applied Physics

Characterization of dilute InPN layers grown by liquid phase epitaxy

We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects. © 2008 American Institute of Physics.

Applied Physics Letters

Properties of dilute InAsN layers grown by liquid phase epitaxy

We review here our work on the growth of dilute GaAsN, GaSbN and InAsN epitaxial layers using a novel liquid phase epitaxy technique, first developed by us. The growth melt for these materials were preapared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively. The nitrogen content in the grown materials was obtained through various characterization techniques, namely, energy dispersive X-rays, high resolution X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. Nitrogen-induced deep levels in some materials have been identified and investigated. © 2007 IEEE.

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Investigation of some group III-V dilute nitride materials grown by liquid phase epitaxy

The growth of dilute GaAsN layers using polycrystalline GaN as the source of nitrogen was studied using liquid phase epitaxy (LPE) technique. Investigations show a band-gap reduction of 90 meV due to the optical transmission and photocurrent technique. An electron trap of 0.07 eV was found in the material originated due to the nitrogen. The results show that the growth of electron trap was tentatively related to (N-N) defects at As sites.

Observation of a 0.7 eV electron trap in dilute GaAsN layers grown by liquid phase epitaxy

Hall mobility and carrier concentration measurements are done on In0.53Ga0.47As layers grown by liquid phase epitaxy from melts containing 0.1-0.18 wt % Er. The carrier concentration in the layer decreased to 2 x 1014 cm-3 upon the addition of 0.16 wt % Er to the growth melt but the corresponding mobility of the layer increased only marginally. A detailed analysis of the temperature-dependent Hall mobility data for the samples using a theoretical curve fitting technique revealed that the donor impurities in the material are reduced to a greater extent compared to the acceptors, making the layers compensated. The experimental mobilities are further compared with the published values of theoretically calculated mobilities for InGaAs with similar compensations. It is shown that the space charge scattering effects are to be considered in order to get a good agreement between the experimental and the theoretical values. © 2000 American Institute of Physics.

Impurity reduction in In0.53Ga0.47As layers grown by liquid phase epitaxy using Er-treated melts

Photocapacitance measurements in the photon energy range of 0.64 to 1.27 eV are done on GaAs layers grown by liquid phase epitaxy (LPE) and doped with varying amounts of indium (In) and antimony (Sb). Two hole traps with optical ionization energies of 0.65 and 0.79 eV are revealed in the material which are assumed to be two levels associated with the hole trap B reported in the literature. In addition, the hole trap A, usually found in LPE GaAs is also detected here by optical deep level transient spectroscopy (ODLTS) technique. The results of trap density measurements, as functions of isoelectronic doping concentration, indicate that VGa is an active constituent of the hole traps in LPE GaAs. The concentration of the 0.79 eV trap is found to be reduced in the material with high concentration of Sb. The analysis of photocapitance data using the existing theoretical models indicates the presence of an electron trap with activation energy of 0.75 eV in the heavily Sb‐doped material. This trap may be identified with the second charge state of the SbGa electron trap, obtained previously in bulk and metalorganic vapor phase epitaxial GaAs doped with Sb. The sharp reduction of the 0.79 eV hole trap density in Sb‐doped materials is explained by assuming the complex GaAsV Ga−, as its source. Copyright © 1994 WILEY‐VCH Verlag GmbH &amp; Co. KGaA

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ISSN	0268-1242
Open Access	Yes