Interdiffusion in III-V semiconductor quantum dots (QDs) may occur during growth and subsequent device processing steps. The photoluminescence (PL) spectra of InX Ga1-X As/GaAs and InX Ga1-X N/GaN QDs change significantly on annealing. The size and shape of a QD dot are important parameters, which govern this change of the PL spectra. In this communication, we have investigated the effects of interdiffusion in realistic InX Ga1-X As/GaAs and InX Ga1-X N/GaN QDs with various geometries which are of theoretical and practical interest such as pyramidal, truncated pyramidal, and lens shaped, through quantum mechanical computations. © 2008 American Institute of Physics.