Interdiffusion in III-V semiconductor quantum dots (QDs) may occur during growth and subsequent device processing steps. The photoluminescence (PL) spectra of InX Ga1-X As/GaAs and InX Ga1-X N/GaN QDs change significantly on annealing. The size and shape of a QD dot are important parameters, which govern this change of the PL spectra. In this communication, we have investigated the effects of interdiffusion in realistic InX Ga1-X As/GaAs and InX Ga1-X N/GaN QDs with various geometries which are of theoretical and practical interest such as pyramidal, truncated pyramidal, and lens shaped, through quantum mechanical computations. © 2008 American Institute of Physics.

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S KABI

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University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Dependence of the photoluminescence of annealed III-V semiconductor quantum dots on their shape and dimension

Journal of Applied Physics

Recently InXGa1-XN/GaN heterostructures and quantum wells (QWs) have gained immense importance in the application of III-V nitride materials. Reported values of the ratios of conduction band offset to valence band offset for InXGa1-XN/GaN QW structures, ΔEc:ΔEv, vary widely from 38:62 to 83:17. While trying to explain the unusual shifts in the photoluminescence (PL) spectra, obtained from InXGa1-XN/GaN QW structures, it has been found that a band offset ratio, ΔEc:ΔEv = 55:45, explains all the experimental data precisely. In this paper detailed theories, procedures, results and discussions to establish the newly estimated band offsets will be presented. © 2006 Elsevier B.V. All rights reserved.

Thin Solid Films

Band offsets of InXGa1-XN/GaN quantum wells reestimated

Interdiffusion in InX Ga1-X AsGaAs quantum dots (QDs) may occur during high temperature growth and processing, which may create problems in the ultimate device performance. It is simulated through successive high temperature annealing, and the changes at each stage are studied through photoluminescence (PL). Significant changes are observed in the peak energy, linewidth, and intensity of the PL spectra. These have been attributed to relaxation of strain, changes in the composition of InX Ga1-X As, and size distribution of the QDs, which fail to establish proper understanding qualitatively and quantitatively. In this Communication we present appropriate interpretations of the changes in the observed PL through quantum mechanical concepts and computations. © 2007 American Institute of Physics.

Journal	Journal of Applied Physics
Publisher	AMER INST PHYSICS
ISSN	0021-8979
Open Access	No