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Computer studies of the effect of electron and hole current multiplication factors on the d.c. and microwave properties of symmetrical Si DDR IMPATT devices
M SRIDHARAN, S K ROY
Published in -
1982
Volume: 25
   
Issue: 6
Pages: 493 - 497
Abstract
Computer studies are presented on the effect of carrier current multiplication on the d.c. field and current profiles and the small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode, taking into account the realistic field dependence of ionization rate and drift velocity of charge carriers and also the effect of mobile space-charge. The d.c. field and current profiles indicate that the lowering of the electron current multiplication (Mn) is more effective than the lowering of hole current Multiplication factor (Mp) in modifying the d.c. properties of Si DDR devices. The computer-aided small-signal analysis carried out for the same structure shows that, a lowering of Mn leads to a sharp decrease of the peak value of the small-signal negative conductance at a fixed d.c. current density which is accompanied by a shift of the frequency range of oscillation towards the higher frequency side. © 1982.
About the journal
JournalSolid State Electronics
Publisher-
ISSN0038-1101