Computer simulation of the high frequency properties of flat profile double drift region (DDR) impatts based on indium phosphide is carried out for mm‐wave V‐band (≈ 60 GHz) frequency. The profiles of negative resistance in the depletion layer of the DDR diode and their admittance characteristics are analysed for three current levels. The results show that the total negative resistance which is an useful parameter to indicate the output power from the device does not degrade appreciably due to mobile space charge even if a high current viz. 3 × 108 Am−2 is pushed through these devices. Copyright © 1988 WILEY‐VCH Verlag GmbH &amp; Co. KGaA

J P BANERJEE

S P PATI

S K ROY

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

&nbsp;

The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

&nbsp;

It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

physica status solidi (a)

In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed tunnelling and avalanche transit time mode is studied by taking into account the parasitic series resistance of the device. The results show that the parasitic resistance of mm-wave IMPATTs increases and consequently the power delivered by the device decreases due to the consequence of band-to-band tunnelling. The critical background doping concentration and operating frequency are found to be 5.0 × 1023 m-3 and 260 GHz, respectively, above which the influence of tunnelling on the RF performance of the device becomes predominant. © 2014 © 2014 Taylor & Francis.

International Journal of Electronics

Effects of tunnelling current on millimetre-wave IMPATT devices

Computer studies have been made on the high frequency characteristics of symmetrically doped flat profile double drift region (DDR) InP and GaAs impatts in the mm-wave (60-100 GHz) frequency band. The spatial distribution of high frequency negative resistance and reactance in the depletion layer of DDR devices and their admittance properties have been investigated. The results indicate that DDR InP impatts should have higher drift zone voltage drop, higher negative resistance and higher negative conductance compared to their GaAs counterparts designed for the same range of mm-wave frequencies. Furthermore, the negative resistance peak is larger in magnitude for InP impatts compared to that for GaAs impatts. It is thus observed that DDR InP impatts should be superior to their GaAs counterparts as regards mm-wave power generation with high conversion efficiency. © 1989 Springer-Verlag.

Applied Physics A Solids and Surfaces

High frequency characterisation of double drift region InP and GaAs diodes

A computer study on the dc field and current-density profiles of a Si n+-p-v-n-p+ double avalanche region (DAR) Impatt has been carried out. With increasing current density the uniform electric field in the central drift region remains almost unaffected due to cancellation of mobile space charge, in case of symmetrically doped structure. Also the avalanche and drift-zone widths and the RF conversion efficiency remain almost unaltered. For asymmetric doping there is a small space-charge effect. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.

Journal	physica status solidi (a)
Publisher	-
ISSN	0031-8965