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Comparative investigation of Ga-and Sn-doped ZnO nanowires/p-Si heterojunctions for UV-photo sensing
Published in Institute of Electrical and Electronics Engineers Inc.
Pages: 1 - 5
Vertically oriented undoped, Ga-doped and Sn-doped ZnO nanowires are grown by using novel double step chemical bath deposition (CBD) technique. The nanowire morphology, crystallite quality, energy bandgap, and UV-visible absorption properties are investigated by employing FESEM, XRD and UV-vis measurements. Comparative photoresponse of the ZnO nanowire/p-Si heterojunction photodiodes is studied by measuring the photo-to-dark current ratios, self-powered photo-switching behavior and intensity-dependant photocurrent at zero applied bias. Ga-doped ZnO nanowires/p-Si heterojunction photodiode exhibits relatively higher photocurrent while the Sn-doped devices show faster photoswitching operation. An excellent photoresponse with the linear dependency of photocurrent on the incident UV-intensity has been observed in the Sn-doped photodiodes. © 2018 IEEE.
About the journal
JournalData powered by Typeset2018 International Symposium on Devices, Circuits and Systems, ISDCS 2018
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo