Vertically oriented undoped, Ga-doped and Sn-doped ZnO nanowires are grown by using novel double step chemical bath deposition (CBD) technique. The nanowire morphology, crystallite quality, energy bandgap, and UV-visible absorption properties are investigated by employing FESEM, XRD and UV-vis measurements. Comparative photoresponse of the ZnO nanowire/p-Si heterojunction photodiodes is studied by measuring the photo-to-dark current ratios, self-powered photo-switching behavior and intensity-dependant photocurrent at zero applied bias. Ga-doped ZnO nanowires/p-Si heterojunction photodiode exhibits relatively higher photocurrent while the Sn-doped devices show faster photoswitching operation. An excellent photoresponse with the linear dependency of photocurrent on the incident UV-intensity has been observed in the Sn-doped photodiodes. © 2018 IEEE.

ANUPAM KARMAKAR

Electronic Science

SANATAN CHATTOPADHYAY

R SAHA

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Comparative investigation of Ga- and Sn-doped ZnO nanowires/p-Si heterojunctions for UV-photo sensing

2018 International Symposium on Devices, Circuits and Systems, ISDCS 2018

Vertically oriented, high quality n-type ZnO nanowire/p-Si heteroj unction photodiode is fabricated by inexpensive chemical bath deposition technique. Under 5.30 mW/sq.cm, 374 nm UV irradiation in air, photodiode offered a maximum self-biased photocurrent and photosensitivity of-26.55μA and 23000. Photodiode exhibited very stable, rapid self-biased binary photocurrent switching with a rise and fall time of ∼25.27 ms and ∼49.82ms. © 2016 IEEE.

International Conference on Microelectronics, Computing and Communication, MicroCom 2016

Self-powered rapid binary UV photoswitching with n-ZnO NW/p-Si photodiode

In this work, a comparative performance analysis of ZnO nanowires grown by following single- and double-step techniques on (100) p-Si substrate has been conducted. High-quality ZnO nanowires with c-axis orientation and perfect crystalline structures with appropriate chemical stoichiometry have been obtained from both the approaches. The areal density of the nanowires grown from double step approach is almost twice the nanowires grown by employing the single step approach. Histogram analysis shows that the diameter and height of majority of the single-step grown nanowires are ~370nm and ~2.45μm, and for the double step grown nanowires these are ~210 nm and ~2.16 μm, respectively. The bandgap values of the single-step and double-step grown nanowires are measured to 3.19eV and 3.26eV, respectively. The current-voltage characteristics of p-Si/n-ZnO diodes indicate that the forward current is contributed by both the electrons and holes and the relevant cut-in voltages are measured to be 0.5V and 2.5V, respectively. © 2016 VBRI Press.

Journal	Data powered by Typeset2018 International Symposium on Devices, Circuits and Systems, ISDCS 2018
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open Access	No