AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET Vs normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET. © 2019 IEEE.

B KUMARI

K MAZUMDAR

A GHOSAL

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019

In AlGaN/GaN HEMTs, electrical degradation occurs due to high-voltage stress operation which can be described by a critical voltage operation by which degradation starts to take place which is irreversible. Our investigation is on how electrical degradation occurs due to physical degradation in the device. In this work using Griffith's Equation and inverse piezo electric effect we have shown how physical degradation affects electrical properties of the device and we have also shown how cracks are generated in AlGaN epitaxial layer of the device. © 2018 Elsevier Ltd

Superlattices and Microstructures

Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT

Microelectronics Reliability

Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Journal of Applied Physics

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Journal	Data powered by TypesetProceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.