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University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Characteristics of metal-semiconductor diodes made by a chemical reduction process

Solid State Electronics

Metal-semiconductor contacts have been fabricated by electroless deposition of Cu on chemically cleaned n-type silicon and their characteristics studied. The values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts. A non-linearity in the 1/C 2 vs V plot has been observed and the same has been satisfactorily explained by taking surface state capacitance into consideration. © 1980, All rights reserved.

Solid-State Electronics

Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method

Who Was Who

Scott, Edward Taylor, (15 Nov. 1883–22 April 1932), Editor of the Manchester Guardian since 1929

SILICON GERMANIUM THERMOELECTRIC MATERIALS AND MODULE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 9, January 1, 1970-March 31, 1970.

Die metall-halbleiter-kontaktbarrieren der metalle aus der nebengruppe I und VIII auf silizium und germanium

Journal	Solid State Electronics
Publisher	-
ISSN	0038-1101