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Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method
A K DATTA, K GHOSH, N K D CHOWDHURY, A N DAW
Published in PERGAMON-ELSEVIER SCIENCE LTD
1980
Volume: 23
   
Issue: 8
Pages: 905 - 907
Abstract
Metal-semiconductor contacts have been fabricated by electroless deposition of Cu on chemically cleaned n-type silicon and their characteristics studied. The values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts. A non-linearity in the 1/C 2 vs V plot has been observed and the same has been satisfactorily explained by taking surface state capacitance into consideration. © 1980, All rights reserved.
About the journal
JournalData powered by TypesetSolid-State Electronics
PublisherData powered by TypesetPERGAMON-ELSEVIER SCIENCE LTD
ISSN0038-1101