Metal-semiconductor contacts have been fabricated by electroless deposition of Cu on chemically cleaned n-type silicon and their characteristics studied. The values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts. A non-linearity in the 1/C 2 vs V plot has been observed and the same has been satisfactorily explained by taking surface state capacitance into consideration. © 1980, All rights reserved.

A K DATTA

K GHOSH

N K D CHOWDHURY

A N DAW

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method

Solid-State Electronics

Interest in the metallization of dielectric substrates such as ceramics, plastics is growing because of their wider applications in electronic industries in the fabrication of MIC's, HIC's etc. An attempt has been made to deposit copper and nickel using room temperature electroless baths on pre-selected areas of alumina and FRP substrates using PdCl2 as the activator. The process offers a uniform dense deposit of Ni/Cu selectively on the substrates. For full coverage of the metal on the substrate it has been found that either AgNO3 or PdCl2 as activator has the same effect. The process yields a dense deposit of Cu and Ni having good adherence to the substrates.

IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India)

Photoselective deposition of copper and nickel on non-conducting substrates by alkaline electroless baths at room temperature

Metal-semiconductor diodes have been fabricated by electrodeposition of gold, silver, nickel, iron and copper onto chemically cleaned epitaxial n-type silicon. The barrier height of the diodes has been determined both by I- V and C- V techniques. Values of the barrier height (φB) and the ideality factor (n) comparable to these of vacuum-evaporated metal semiconductor diodes have been obtained. A non-linearity in the 1/C2 versus V plot has been observed, and has been satisfactorily explained by taking surface state capacitance into consideration. The value of the surface state density (Ds) and position of neutral level (φ0) at the surface have been determined from the observed linear relationship between the barrier heights of the contacts and the metal work function. It has further been observed that the barrier height follows a linear relationship both with electronegativity (Xp) and atomic number (Z) of the deposited metals. © 1983 Taylor &amp; Francis Group, Ltd.

International Journal of Electronics

On metal-semiconductor diodes fabricated by electrodeposition techniques

Solid State Electronics

Characteristics of metal-semiconductor diodes made by a chemical reduction process

Benezit Dictionary of Artists

Hys, Jacques de

The Sri Lanka Reader

Suggestions for Further Reading

Who Was Who

McGrigor, Admiral of the Fleet Sir Rhoderick Robert, (12 April 1893–3 Dec. 1959)

Excess capacitance and non-ideal Schottky barriers on GaAs

Journal	Data powered by TypesetSolid-State Electronics
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ISSN	0038-1101