An attempt is made to formulate the generalized carrier statistics in superlattice structures of small‐gap semiconductors by deriving expressions for the density‐of‐states function and the carrier concentration in such structures in the presence of a quantizing magnetic field. The corresponding expressions for superlattices of large‐gap semiconductors can easily be obtained from the generalized relations derived. These results would be more general than those reported in the literature for such structures of large‐gap semiconductors on the basis of tight‐binding approximations. Copyright © 1983 WILEY‐VCH Verlag GmbH & Co. KGaA