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Calculation of Intrinsic Carrier Density of Ge1−xSnx Alloy, Its Temperature Dependence Around Room Temperature and Its Effect on Maximum Electron Mobility
S. Mukhopadhyay, , G. Sen, P.K. Basu
Published in Springer Science and Business Media Deutschland GmbH
Volume: 147
Pages: 551 - 556
Values of intrinsic carrier density ni in Ge1−xSnx alloy (0 ≤ x ≤ 0.2) are calculated by including composition dependent effective masses in Γ and L valleys in the conduction band, in light hole (LH) and heavy hole (HH) valence bands, and composition-dependent band gaps. The maximum temperatures of operation of the alloys are also determined over a range of dopant densities and alloy compositions. The temperature dependence of intrinsic density around room temperature is obtained by using x-dependent α and β parameters in Varshney’s equation. The maximum achievable electron mobility based on ni is estimated. © 2021, Springer Nature Singapore Pte Ltd.
About the journal
JournalData powered by TypesetLecture Notes in Networks and Systems
PublisherData powered by TypesetSpringer Science and Business Media Deutschland GmbH