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Calculated Characteristics of a Transistor Laser Using Alloys of Gr-IV Elements
, G SEN, S DE, R BASU, V CHAKRABORTY, P K BASU
Published in Wiley-VCH Verlag
2018
Volume: 255
   
Issue: 9
Abstract
The performance of a transistor laser (TL) structure consisting of SiGeSn emitter, SiGeSn base incorporating a GeSn quantum well (QW) and a GeSn collector is studied in the present work. The Sn concentration is chosen to yield direct band gap for all the layers. An earlier model developed for InGaAs QW in GaAs base, that could satisfactorily explain most of the experimental data, is employed to calculate terminal currents, threshold current, and light power output. The model solves continuity equation, considers virtual states above QW, Fermi Golden rule to calculate gain, Fermi statistics for occupancy of subbands and broadening of states. A low value of threshold base current is predicted. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
About the journal
JournalData powered by TypesetPhysica Status Solidi (B) Basic Research
PublisherData powered by TypesetWiley-VCH Verlag
ISSN0370-1972
Open AccessNo