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Bandgap reduction in dilute InPN grown by liquid phase epitaxy
T D DAS, S C DAS, S DHAR
Published in -
2008
Pages: 275 - 282
Abstract
We report the absorption and photoluminescence (PL) properties of dilute InPN layers grown by liquid phase epitaxy. All samples were characterized by high resolution xray diffraction at room temperature. The band anticrossing model accounts very well for recent experimental results obtained on different samples. Our results indicate that a maximum amount of0.2% nitrogen has been incorporated in the material with a band gap lowering consistent with expectations. Our theoretical results provide a good agreement with the available experimental data.
About the journal
Journal2008 2nd National Workshop on Advanced Optoelectronic Materials and Devices, AOMD 2008
Publisher-