Band discontinuity is an important parameter for the design of heterojunction based electronic and opto-electronic devices. An alternative method for band offset measurement in quantum wells has been outlined in this paper. The band offset is determined from a comparison of experimental results and theoretical computations of the temperature dependent total charge content of a quantum well. In spite of the simplicity of the measurement procedures the result at its best has an error around ±2%.

D BISWAS

S CHAKRABARTI

S DASGUPTA

S KUNDU

R DATTA

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Physica Status Solidi (B) Basic Research

Experimental capacitance-voltage (C-V) profiling of semiconductor heterojunctions and quantum wells has remained ever important and relevant. The apparent carrier distributions (ACDs) thus obtained reveal the carrier depletions, carrier peaks and their positions, in and around the quantum structures. Inevitable errors, encountered in such measurements, are the deviations of the peak concentrations of the ACDs and their positions, from the actual carrier peaks obtained from quantum mechanical computations with the fundamental parameters. In spite of the very wide use of the C-V method, comprehensive discussions on the qualitative and quantitative nature of the errors remain wanting. The errors are dependent on the fundamental parameters, the temperature of measurements, the Debye length, and the series resistance. In this paper, the errors have been studied with doping concentration, band offset, and temperature. From this study, a rough estimate may be drawn about the error. It is seen that the error in the position of the ACD peak decreases at higher doping, higher band offset, and lower temperature, whereas the error in the peak concentration changes in a strange fashion. A completely new method is introduced, for derivation of the carrier profiles from C-V measurements on quantum structures to minimize errors which are inevitable in the conventional formulation. © 2014 AIP Publishing LLC.

Fulltext

Journal of Applied Physics

An effective approach for the minimization of errors in capacitance-voltage carrier profiling of quantum structures

Recently InXGa1-XN/GaN heterostructures and quantum wells (QWs) have gained immense importance in the application of III-V nitride materials. Reported values of the ratios of conduction band offset to valence band offset for InXGa1-XN/GaN QW structures, ΔEc:ΔEv, vary widely from 38:62 to 83:17. While trying to explain the unusual shifts in the photoluminescence (PL) spectra, obtained from InXGa1-XN/GaN QW structures, it has been found that a band offset ratio, ΔEc:ΔEv = 55:45, explains all the experimental data precisely. In this paper detailed theories, procedures, results and discussions to establish the newly estimated band offsets will be presented. © 2006 Elsevier B.V. All rights reserved.

Thin Solid Films

Band offsets of InXGa1-XN/GaN quantum wells reestimated

We have developed a quantum mechanical model for understanding and explaining the capacitance-voltage (C-V) carrier profiles observed in quantum wells (QW). The external field imposed on the QW during C-V profiling changes the carrier distribution of the system. This model considers the effects of field and quantum confinement of the carriers in the well. The results obtained by iterative solutions of Schrodinger's and Poisson's equations give a better understanding of the experiments than the previous models where quantum confinement is ignored. © 1997 American Institute of Physics.

Anomalous capacitance-voltage profiles in quantum wells explained by a quantum mechanical model

Quantum Private Communication

Practical Private Communication Systems

Who Was Who

Coddington, Fitzherbert John Osbourne, (27 July 1881–18 March 1956)

Physical Review Letters

Enhanced Nucleation and Enrichment of Strained-Alloy Quantum Dots

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

Band offset of quantum wells computed from charge measurements

Journal	Data powered by TypesetPhysica Status Solidi (B) Basic Research
Publisher	Data powered by TypesetWILEY-V C H VERLAG GMBH
ISSN	0370-1972