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Band offset in InP/Ga0.47In0.53As heterostructuresPublished in AMER INST PHYSICS
1991
DOI: 10.1063/1.104421
Volume: 58
Issue: 10
Pages: 1056 - 1058
Energy levels in InP/Ga0.47In0.53As quantum wells are calculated after reformulating the energy-dependent effective mass to be used for taking into account the energy-band nonparabolicity of both constituents. The required value of the ratio of the conduction-band and valence-band discontinuities is found to be close to 2/3, in agreement with the value found by other methods. The value of the nonparabolicity factor is also found to be the same as that used in earlier transport studies.
Topics: Band offset (51)%51% related to the paper and Effective mass (solid-state physics) (50)%50% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Band offset in InP/Ga0.47In0.53As heterostructures. Applied Physics Letters 58, 10 p1056-1058 (1991)] and may be found at https://doi.org/10.1063/1.104421.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| Publisher | AMER INST PHYSICS |
| ISSN | 0003-6951 |
| Open Access | No |
