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Band offset in InP/Ga0.47In0.53As heterostructures
B R NAG, S MUKHOPADHYAY
Published in AMER INST PHYSICS
1991
Volume: 58
   
Issue: 10
Pages: 1056 - 1058
Abstract
Energy levels in InP/Ga0.47In0.53As quantum wells are calculated after reformulating the energy-dependent effective mass to be used for taking into account the energy-band nonparabolicity of both constituents. The required value of the ratio of the conduction-band and valence-band discontinuities is found to be close to 2/3, in agreement with the value found by other methods. The value of the nonparabolicity factor is also found to be the same as that used in earlier transport studies.
About the journal
JournalApplied Physics Letters
PublisherAMER INST PHYSICS
ISSN0003-6951
Open AccessNo