We report a two-step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. Photoluminescence and deep-level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that grown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate. © 1996 American Institute of Physics.

U DAS

S DHAR

M MAZUMDAR

Fulltext

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

Atomic layer epitaxial predeposition for GaAs growth on Si

Applied Physics Letters

Deep level transient spectroscopy studies of GaAs:Sb layers, grown by liquid phase epitaxy reveal the existence of two electron traps with activation energies of 0.4 and 0.54 eV. High temperature annealing of the material reduced the density of the former trap while that of the latter is increased substantially. Density of the 0.54 eV trap is also found to be controlled by the Sb content in the material. These two results, together with the obtained signature of the 0.54 eV trap, suggest that it is the same as the Sb Ga related electron trap observed previously in GaAs:Sb materials grown by other techniques. Annealing increases the density of this trap by creating more SbGa defects as a consequence of Ga out-diffusion from the material. Photocapacitance measurements indicate the presence of a 0.75 eV electron trap in the annealed layers, which is identified with the second charge state of the SbGa electron trap. © 1995 American Institute of Physics.

Journal of Applied Physics

Electron traps in GaAs:Sb grown by liquid phase epitaxy

Japanese Journal of Applied Physics

Thermal Stress and Dislocation Density in Undercut GaAs on Si

Domain boundary control of edge roughness in vicinal Si(001)

Elimination of dark line defects in GaAs‐on‐Si by post‐growth patterning and thermal annealing

Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate

Journal	Applied Physics Letters
Publisher	AMER INST PHYSICS
ISSN	0003-6951
Open Access	No