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Atomic layer epitaxial predeposition for GaAs growth on Si
U DAS, S DHAR, M MAZUMDAR
Published in AMER INST PHYSICS
1996
Volume: 68
   
Issue: 25
Pages: 3573 - 3575
Abstract
We report a two-step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. Photoluminescence and deep-level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that grown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate. © 1996 American Institute of Physics.
About the journal
JournalApplied Physics Letters
PublisherAMER INST PHYSICS
ISSN0003-6951
Open AccessNo