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Aspects and Reduction of Miller Capacitance of Lateral Tunnel FETsPublished in Institute of Electrical and Electronics Engineers Inc.
2018
This paper discusses aspects of gate-To-drain capacitance (Miller capacitance) of lateral tunnel FETs (LTFETs). It is considered how to reduce the mirror capacitance of LTFET. © 2018 IEEE.
Topics: Capacitance (60)%60% related to the paper
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About the journal
| Journal | Data powered by TypesetIMFEDK 2018 - 2018 International Meeting for Future of Electron Devices, Kansai |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
Authors (1)
ABHIJIT MALLICK- Carrier mobility degradation in metal-oxide-semiconductor field-effect transistors due to oxide charge
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