Header menu link for other important links
X
Analysis of some important parameters of Si-Ge-Sn RCE-HPT exploiting QCSE and FKE
S. Ghosh, , G. Sen, P.K. Basu
Published in Institute of Electrical and Electronics Engineers Inc.
2020
Abstract
The performance of a resonant cavity enhanced Heterobipolar Phototransistor with Ge0.992Sn0.008/Si0.3Ge0.61Sn0.09 Quantum Well under Quantum Confined Stark Effect has been presented here. Further the Quantum Wells are replaced by GeSn bulk absorption region to estimate the influence of Franz Keldysh Effect. © 2020 Indian Radio Science Society.