A new approximate relationship between position normalised by means of Debye length and normalised electrostatic potential has been obtained which can be used for semiconductor modeling, in, for example, the problem of the step junction at equilibrium. © 1989.

S S DE

A K GHOSH

University of Calcutta (informally known as Calcutta University or CU) is a collegiate public state university located in Kolkata, West Bengal, India.&nbsp;Within India it is recognized as a &quot;Five-Star University&quot; and accredited &quot;A&quot; Grade by National Assessment and Accreditation Council.

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The University of Calcutta has secured the Fifth position among the Universities of India in the prestigious &quot;Indian University Ranking 2019&quot; list, released by the NIRF of the Ministry of Human Resource Development, Government of India.

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It was established on 24 January 1857, and was one of the first institutions in Asia to be established as a multidisciplinary and Western-style university. Its alumni and faculty include several heads of state, heads of government, social reformers, prominent artists, only academy award winner and Dirac medal winner in India, many Fellows of the Royal Society and five Nobel laureates as of 2019 which is highest in South Asia.

University Of Calcutta

An approximate solution of Poisson's equation for semiconductor device modeling

Solid State Electronics

A model calculation for the variation of the normalized potential against the normalized position for a forward-biased, below 2 thermal voltage, high-low junction has been made through numerical computations of Poisson's equation. The model is oriented to a junction with a sufficiently large doping difference between the two sides.

Fulltext

Journal of Applied Physics

Some analyses of potential profiles of forward-biased high-low junctions

A computational analyse of Poisson's equation relating normalised potential with normalised position for a heavily doped high-low junction at equilibrium is made. This is accomplished by choosing a model where both the sides are assumed to be heavily doped with one side having a relatively lighter doping in comparison to the other side. Variations of potential and majority carrier density against position are studied taking into account the effects of band gap narrowing and carrier degeneracy. The results are shown graphically.

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

MODELING OF A HEAVILY DOPED HIGH-LOW JUNCTION AT EQUILIBRIUM

Historia Mathematica

Teubner-Archiv zur Mathematik. Teubner Verlagsgesellschaft, Leipzig

Solid-State Electronics

Modeling the inversion layer at equilibrium

Replacing the depletion approximation

IEEE Transactions on Electron Devices

A new scaling length for modeling semiconductor space-charge regions

An extended and unified solution for the semiconductor surface problem at equilibrium

Journal	Solid State Electronics
Publisher	-
ISSN	0038-1101