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Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors
J P BANERJEE
Published in Springer New York LLC
2016
Volume: 15
   
Issue: 1
Pages: 34 - 39
Abstract
This paper contains additional validations of a comprehensive analytical model based on multistage scattering phenomena to evaluate the impact ionization rates of charge carriers in semiconductors which was proposed by the authors and reported earlier. The model has been used to evaluate the ionization rates of both electrons and holes in some potential wide bandgap (WBG) semiconductors such as Wurtzite-GaN (Wz-GaN), type-IIb diamond and 6H-SiC. The numerical results obtained from the analytical model within the respective electric field ranges under consideration have been compared with the ionization rate values calculated by using the empirical relations fitted from the experimentally measured data. The calculated values of impact ionization rates of electrons and holes in all the WBG semiconductors under consideration are found to be in close agreement with the experimental results. © 2015, Springer Science+Business Media New York.
About the journal
JournalData powered by TypesetJournal of Computational Electronics
PublisherData powered by TypesetSpringer New York LLC
ISSN1569-8025