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A two-dimensional surface potential based subthreshold-slope model for short-channel MOS transistors
S BAISHYA, C K SARKAR,
Published in -
2008
Pages: 489 - 491
Abstract
An analytical model for the subthreshold-slope (SS) of short-channel MOS transistors is presented in this paper. The expression for the subthreshold current, which is the basis of the subthreshold-slope, utilizes the concept of splitting of quasi-Fermi levels along the channel. The current model is based on the surface potential for short-channel devices where two-dimensional effects are incorporated by solving a pseudo-2D Poisson's equation. To arrive at a simple analytical expression, some approximations with proper explanation are made. The model results are compared with that of two-dimensional numerical simulation results using DESSIS of ISE TCAD, and a very good agreement between the two is found. © 2008 IEEE.
About the journal
Journal"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"
Publisher-