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A possible threshold voltage definition of lateral tunnel FET
Y MORI, S SATO, Y OMURA,
Published in Institute of Electrical and Electronics Engineers Inc.
2016
Pages: 188 - 189
Abstract
This paper proposes a possible threshold voltage definition of lateral tunnel FETs. The method well estimates the threshold condition with high universality given practical bias conditions and device parameters. Device simulations demonstrate that the threshold condition has been physically elucidated. © 2016 IEEE.
About the journal
JournalData powered by Typeset2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.