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A comparative study on the performance of RESET based electro-thermal process in ring shaped confined Ge 2 Sb 2 Te 5 and Ge 1 Cu 2 Te 3 chalcogenide memory structures
Published in Elsevier Ltd
Volume: 13
Pages: 325 - 331
This work presents the comparative performance analysis of Ge2Sb2Te5 (GST) and Ge1Cu2Te3 (GCT) based phase change memory materials with ring-shaped confined chalcogenide (RCC) cell structure. Three-dimensional finite element simulation with rotational symmetry is used to analyze the electro-thermal process within the RCC cell during phase change operation. The RCC cell structures show superior performance in terms of power consumption required for phase change as compared to other reported PCRAM structures. The results indicate that during the transition from low to high resistance, GCT cell shows superior performance compared to GST cell with power consumption of 1.62 mW and 2.83 mW, respectively. Also, 42.75% reduction in power consumption has been observed in the proposed GCT cell. The GCT based RCC cell requires a relatively lower voltage of 1.75 V for phase transition in comparison to 2.55 V in a GST RCC cell of similar dimension. © 2017 Elsevier Ltd
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JournalData powered by TypesetMaterials Today Communications
PublisherData powered by TypesetElsevier Ltd
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