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A Comparative Study of Phase Modulation in InGaAsP/InP and GaAs/AlGaAs Based P-i-N and P-p-n-N Structures
A BANDYOPADHYAY, P K BASU
Published in -
1992
Volume: 10
   
Issue: 10
Pages: 1438 - 1442
Abstract
We have theoretically studied the phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the P-i-N and P-p-n-N configurations at wavelengths of 1.3 and 1.55 μms. The carrier induced effects (plasma, band filling, and many body) and the field-induced effects (linear electrooptic and electro-refractive) are considered to calculate the change in the refractive index. Both structures made of InGaAsP/InP show higher modulation efficiency than the corresponding structures made of GaAs/AlGaAs in almost all the cases considered due to a larger index change in InGaAsP as its band-gap wavelength is closer to both 1.3 and 1.55 μms. © 1992 IEEE
About the journal
JournalJournal of Lightwave Technology
Publisher-
ISSN0733-8724